Super Association meeting in August to discuss the development of upstream and downstream industries of superhard materials & wide bandwidth semiconductors

Release time:

2024-09-24 15:48

Chapter executive director and above enterprises, expert committee members, member enterprises and industry organizations:

In order to further promote the extension of the industry to the national major fields, build a platform for upstream and downstream exchanges and communication, guide the transformation and upgrading of the industry, and promote the high-quality development of the industry, after discussion, the branch will join hands with the Zhongguancun Tianhe Wideband Semiconductor Technology Innovation Alliance to jointly organize and convene the “Wide-band Semiconductor Advanced Technological Innovation and Application Development Summit Forum “. During the same period, the “Sixth Five Standing Directors (Enlarged) Meeting” will be held to summarize and analyze the industry situation in 2022 and the first half of 2023, and to inform the preparatory progress of “Celebrating the 60th Anniversary of the Birth of China's Artificial Diamond Conference”. The specific arrangements are notified as follows:

1. Schedule of meetings

August 9-11, 2023

2、Venue of the Conference

Hotel: Beijing Railway Building

Address：No.102 Bei Bee Wo, Haidian District, Beijing, China

3、timing

August 9: All day check-in

August 9: 19:30-21:00 The Sixth and Fifth Executive Council Meeting of the Chapter

August 10-11: Wide Band Semiconductor Advanced Technology Innovation and Application Development Summit Forum and Exhibition

August 12: Return trip

4、Main agenda of the Standing Council

1. to consider the summary of the work of the Chapter in 2022 and the first half of 2023 and the work plan for the second half of 2023;

2. Considering the relevant motions of the Chapter and informing the progress of the celebration of the 60th anniversary of the birth of China's artificial diamond;

3. Briefly analyze the development status of the superhard material industry in 2022 and the first half of 2023.

5、Broadband Semiconductor Advanced Technology Innovation and Application Development Summit Main Agenda

（一）Conference Highlights

Highlight 1 - authoritative: to invite leaders of ministries and commissions, academicians and experts, leading enterprises, well-known organizations, etc. to teach and explain, and prejudge the future;

Highlight 2 - comprehensive: the forum focuses on unlocking the bottleneck constraints and technological innovations brought about by the whole industry chain, such as equipment (consumables) - substrate - epitaxial - device - module - application (terminal application);

Highlight 3--Innovation: Discuss the application of advanced technologies such as growth, processing and epitaxy of wide-bandwidth semiconductor materials represented by 8-inch silicon carbide, as well as effective measures to improve product quality and reduce costs;

Highlight 4 - Development: demystify the layout, capacity planning and development trend of wide-band semiconductors, and forecast potential opportunities in the medium and long term.

（2）topic of the meeting

1.Broadband semiconductor material growth：

3C-type silicon carbide growth technology

8-inch silicon carbide industry development progress

Liquid phase method of growing silicon carbide technology progress

High quality silicon carbide single crystal composite substrate preparation route

Gallium Nitride Crystal Growth and Physical Properties Analysis

Inch-scale single crystal diamond substrate preparation technology

Development and Industrialization of Large Diameter Silicon Carbide Epitaxial Wafers

Progress of large-size gallium nitride materials

2. Wide-band semiconductor device technology and application:

Trends and Challenges of Silicon Carbide Devices

Silicon carbide MOSFET key process technology

Key Process Technology of Silicon Carbide Power Devices in New Energy Vehicles

Key Process Technology of High Voltage Silicon Carbide Devices in Power Systems

Gallium Nitride Process RF Performance and Model Evaluation

Gallium Nitride Laser Preparation and Packaging Processes

3.Wide-band semiconductor key equipment technology：

Resistance method of silicon carbide crystal preparation and key technology discussion

Silicon carbide cutting diamond wire saw development process

Silicon Carbide Laser Stripping Technology

Silicon carbide grinding and polishing process route

Application of Diamond Products in Wide Bandwidth Semiconductor Manufacturing Processes

Silicon carbide high-performance epitaxial growth key process

6、Registration

1. Delegates are requested to register by filling in the Reply Slip (attached) and emailing it to the Branch Secretariat from July 1 to August 1, or they can scan the QR code and fill in their personal information to register.

2. The conference will charge a conference fee of 2000 RMB/person, and 1600 RMB/person for club members, including conference materials and meals. Participants are requested to book the hotel in advance at their own expense.

Conference hotel details: Beijing Railway Mansion Twin/Queen bed 535 yuan/night/room (single morning) Beijing Railway Mansion (ordinary fast) 398 yuan/night/room (single morning) Hotel Contact Tel: 010-51879108/010-51879171 Note: The conference hotels for the agreement price, the number is limited, please book in advance.

3. During the meeting there are desktop booths, the price of 15,000 yuan / one, branch member units 12,000 yuan / one (including booth production), mainly for wide-band semiconductor materials and devices users. Superhard materials and related enterprises to register for the exhibition location in the South Zone, the number of booths is limited, please have the need to publicize the display of enterprises to contact the branch secretariat.